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J. Chem. Phys. 135, 050901 (2011); http://dx.doi.org/10.1063/1.3615063 (8 pages)

Perspective: The dawning of the age of graphene

George W. Flynn

Department of Chemistry, Nanoscale Science and Engineering Center, and Energy Frontier Research Center, Columbia University, 3000 Broadway, MC 3109, New York, New York 10027, USA

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(Received 25 April 2011; accepted 1 July 2011; published online 1 August 2011)

Graphene is a single sheet of carbon atoms that constitutes the basic building block of macroscopic graphite crystals. Held together by a backbone of overlapping sp2 hybrids, graphene's 2p orbitals form π state bands that delocalize over an entire 2-dimensional macroscopic carbon sheet leading to a number of unusual characteristics that include large electrical and thermal conductivities. Recent discoveries have provided simple methods (e.g., mechanical cleavage of graphite) for preparing laboratory scale samples that can be used to investigate the fundamental physical and chemical characteristics of graphene. In addition, a number of techniques have emerged that show promise for producing large-scale samples with the ultimate goal of developing devices that take advantage of graphene's unusual properties. As large samples become available, the possibility grows for applications of this material in solar cell technology (as flexible, transparent electrodes), in composite material development, and in electronic devices.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. PREPARATION AND CHARACTERIZATION OF GRAPHENE SAMPLES
  3. PROBING CHEMICAL AND PHYSICAL PROPERTIES OF SINGLE AND MULTIPLE SHEET GRAPHENE
    1. Oxidation of graphene
    2. Optical properties of graphene
    3. Properties of graphene membranes
  4. SUMMARY

KEYWORDS and PACS

PACS

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-9606 (print)  
1089-7690 (online)

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Figures (click on thumbnails to view enlargements)

FIG.1
STM topographic image showing honeycomb structure of a single layer graphene flake on silicon dioxide (Vbias = +1.0 V (sample positive), I = 1.0 nA, scan area of 1 nm2). A model of the underlying atomic structure is shown (lower left) as a guide to the eye. (Adapted with permission from E. Stolyarova et al., Proc. Nat. Acad. Sci. 104, 9209 (2007). Copyright 2007 National Academy of Sciences.)

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Stereographic plot of a large-scale (100×62 nm2) STM image of a single-layer graphene film on a silicon dioxide surface. (Vbias = +1.0 V (sample positive) and I = 0.6 nA). The 0.8-nm scale of the vertical (Z) coordinate is greatly enlarged to accentuate the surface features. (Adapted with permission from E. Stolyarova et al., Proc. Nat. Acad. Sci. 104, 9209 (2007). Copyright 2007 National Academy of Sciences.)

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Blow up of the energy dispersion relation for graphene around the Dirac point (K) in the Brillouin zone. Blue indicates levels filled with electrons while red indicates empty levels (holes). 3a represents neutral graphene where the valence band (π bonding states) is completely filled with electrons and the conduction band (π* anti-bonding states) is completely empty. The Fermi level and the Dirac point coincide for this case. 3b describes a situation where electrons are partially drained from the valence band (hole doped graphene with the Fermi level displaced to a position below the Dirac point). 3c represents a situation where extra electrons are forced into the conduction band (negatively doped graphene where the Fermi level is consequently above the Dirac point).

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
Shown are typical Raman lines for single and multi-sheet graphene samples. The two intense features are the G peak at a Raman shift of ∼1580 cm−1 and the D* band at ∼2710 cm−1. The D* band (enlarged in the inset) of a few-layer flake is blue shifted and asymmetrically broadened with respect to that of the single-layer graphene sample. (Adapted with permission from E. Stolyarova et al., Proc. Nat. Acad. Sci. 104, 9209 (2007). Copyright 2007 National Academy of Sciences.)

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.5
Pristine graphene on a Cu(111) single crystal grown in UHV from C2H4 precursor. STM Image, Vbias = +0.8 Volt, I = 0.8 nA, T = 80 K.

FIG.5 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.6
Stereographic STM image of single layer graphene on a Cu(111) single crystal. I = 0.8 nA, Vbias = +0.8 Volts, T = 80 K. Z range ∼0.06 nm. (Note that for this image, white is the lowest point and green the highest point in the topograph.) A model of the underlying atomic structure is shown (lower right) as a guide to the eye.

FIG.6 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.7
STM image of single sheet graphene on a mica surface. Vbias = +1.0 V, I = 100 pA, Z Range: 97.3 pm.

FIG.7 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.8
High resolution STM constant current topograph of a naphthalocyanine (Nc) monolayer on graphite (25×25 nm2, |V| = 1.83 V, 83 pA); during the scans the polarity of the tunneling voltage was switched twice. The corresponding lines where switching took place are marked by triangles on the left hand side and the actual sign of the sample bias is given within each part of the frame. The dark spot near the center of the image is a missing Nc molecule (film defect). The inset shows the structure of the Nc molecule. (Adapted with permission from M. Lackinger et al., J. Phys. Chem. B 108, 2279 (2004). Copyright 2004 American Chemical Society.)

FIG.8 Download High Resolution Image (.zip file) | Export Figure to PowerPoint


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